Synthesis and characterization of metallic TaSi2 nanowires
- 22 November 2005
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 87 (22), 223113
- https://doi.org/10.1063/1.2132523
Abstract
nanowires have been synthesized by annealing thin film and nanodots grown on a Si substrate in an ambient containing Ta vapor. The nanowires are formed in three steps; segregation of Si atoms from the underlayer to form Si base, growth of nanodots on Si base, and elongation of nanowire along the growth direction. Strong field-emission properties promise future electronics and optoelectronics applications.
Keywords
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