Due to the Silicon Carbide (SiC) material’s high electric field strength, wide bandgap, and good thermal conductivity, 4H-SiC thyristors are attractive candidates for pulsed power applications. With a thinner blocking layer almost an order of magnitude smaller than its Silicon (Si) counterpart, these devices promise very fast turn-on capabilities as full conductivity modulation occurs >10 times faster than comparable silicon thyristors, low leakage currents at high junction temperatures and at high voltage, and much lower forward voltage drop at high pulse currents. Our progress on the development of large area (4mm x 4mm) SiC thyristors is presented in this paper.