Hall Effect of Quasi-Hole Gas in Organic Single-Crystal Transistors
- 1 November 2005
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 44 (11L), L1393
- https://doi.org/10.1143/jjap.44.l1393
Abstract
Hall effect is detected in organic field-effect transistors, using appropriately shaped rubrene (C42H28) single crystals. It turned out that inverse Hall coefficient, having a positive sign, is close to the amount of electric-field induced charge upon the hole accumulation. The presence of the normal Hall effect means that the electromagnetic character of the surface charge is not of hopping carriers but resembles that of a two-dimensional hole-gas system.Keywords
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