Impurity-Induced Spin-Orbit Coupling in Graphene
Open Access
- 10 July 2009
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 103 (2), 026804
- https://doi.org/10.1103/physrevlett.103.026804
Abstract
We study the effect of impurities in inducing spin-orbit coupling in graphene. We show that the distortion induced by an impurity can lead to a large increase in the spin-orbit coupling with a value comparable to the one found in diamond and other zinc-blende semiconductors. The spin-flip scattering produced by the impurity leads to spin scattering lengths of the order found in recent experiments. Our results indicate that the spin-orbit coupling can be controlled via the impurity coverage.
Keywords
This publication has 23 references indexed in Scilit:
- Control of Graphene's Properties by Reversible Hydrogenation: Evidence for GraphaneScience, 2009
- The electronic properties of grapheneReviews of Modern Physics, 2009
- Anisotropic Spin Relaxation in GraphenePhysical Review Letters, 2008
- Charged-impurity scattering in grapheneNature Physics, 2008
- Electronic spin transport and spin precession in single graphene layers at room temperatureNature, 2007
- The rise of grapheneNature Materials, 2007
- Spin-orbit gap of graphene: First-principles calculationsPhysical Review B, 2007
- Spin-orbit coupling in curved graphene, fullerenes, nanotubes, and nanotube capsPhysical Review B, 2006
- Intrinsic and Rashba spin-orbit interactions in graphene sheetsPhysical Review B, 2006
- Electric Field Effect in Atomically Thin Carbon FilmsScience, 2004