Data retention characteristics of sub-100 nm NAND flash memory cells
- 1 December 2003
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 24 (12), 748-750
- https://doi.org/10.1109/led.2003.820645
Abstract
In contrast to the conventional theories, we have revealed that the most distinguished mechanism in the data retention phenomenon after Fowler-Nordheim (FN) stress in sub-100 nm NAND Flash memory cells is the annihilation of interface states. Interface state generation rate increases rapidly as the channel width of NAND flash cell decreases. Comparison of interface states and stress-induced leakage current (SILC) component during retention mode shows that the annihilation of interface states strongly affects data retention characteristics of the programmed cells.Keywords
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