Molecular beam epitaxial growth of high performance In0.48Ga0.52P/In0.20Ga0.80As/GaAs p-HEMTs using a valved phosphorus cracker cell
- 1 May 2000
- journal article
- Published by Elsevier BV in Materials Science and Engineering B
- Vol. 74 (1-3), 151-157
- https://doi.org/10.1016/s0921-5107(99)00552-8
Abstract
No abstract availableKeywords
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