Electronic structure ofWSe2: A combined photoemission and inverse photoemission study

Abstract
We report on a complete determination of the experimental and theoretical valence- and conduction-band structure of WSe2. The results of combined angle-resolved photoemission and inverse photoemission are discussed in the context of fully relativistic linear-muffin-tin-orbital and extended linear-augmented-plane-wave calculations. We measure an indirect band gap of 1.2 eV, and find the valence-band maximum to be located at the center of the Brillouin zone and the conduction-band minimum at 0.55ΓK.