Preparation of orientated aluminium nitride films by radio-frequency reactive sputtering
- 1 April 1990
- journal article
- research article
- Published by Springer Science and Business Media LLC in Journal of Materials Science Letters
- Vol. 9 (4), 489-492
- https://doi.org/10.1007/bf00721039
Abstract
No abstract availableKeywords
This publication has 6 references indexed in Scilit:
- AlN thin films with controlled crystallographic orientations and their microstructureJournal of Vacuum Science & Technology A, 1987
- The microstructure of sputter‐deposited coatingsJournal of Vacuum Science & Technology A, 1986
- Evaporated aluminium nitride encapsulating filmsThin Solid Films, 1986
- Reactively sputtered AlN films for GaAs annealing capsJournal of Vacuum Science & Technology A, 1986
- Reactively rf magnetron sputtered AlN films as gate dielectricJournal of Applied Physics, 1983
- Reactive molecular beam epitaxy of aluminium nitrideJournal of Vacuum Science and Technology, 1979