Radiation effects on advanced flash memories
- 1 December 1999
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Nuclear Science
- Vol. 46 (6), 1744-1750
- https://doi.org/10.1109/23.819148
Abstract
Radiation tests of advanced flash memories including, multi-level flash technology, are compared with results from previous generations. Total dose failure levels are comparable to or lower than those of older technologies, but are likely still caused by degradation of the internal charge pump. Small numbers of read errors were observed during single event tests of the multi-level devices that appear to be caused by shifts in the sense amplifier detection levels or cell threshold shifts and rather than loss of electrons off the floating gate.Keywords
This publication has 8 references indexed in Scilit:
- Multilevel flash cells and their trade-offsPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- A novel booster plate technology in high density NAND flash memories for voltage scaling-down and zero program disturbancePublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Flash memories: where we were and where we are goingPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Total ionizing dose effects on flash memoriesPublished by Institute of Electrical and Electronics Engineers (IEEE) ,2002
- Single-event upset in flash memoriesIEEE Transactions on Nuclear Science, 1997
- SEU cross sections derived from a diffusion analysisIEEE Transactions on Nuclear Science, 1996
- A new class of single event hard errors [DRAM cells]IEEE Transactions on Nuclear Science, 1994
- Total dose failures in advanced electronics from single ionsIEEE Transactions on Nuclear Science, 1993