Air-stable ambipolar organic transistors
- 19 March 2007
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 90 (12), 122105
- https://doi.org/10.1063/1.2715028
Abstract
The authors report on ambipolar organic transistors based on the soluble dithiolene derivative (diphenylethylenedithiolato)(1,3-dithiol-2-thione-4,5-dithiolato)nickel [Ni(dpedt)(dmit)]. Due to its small band gap, efficient injection of holes and electrons from gold source/drain electrodes is possible. Both carrier mobilities are estimated to be approximately equal with maximum value on the order of 10 − 4 cm 2 ∕ V s . The transistors exhibit excellent ambient stability with a shelve lifetime exceeding 3 months . The pronounced stability of Ni(dpedt)(dmit) as well as of several other molecules studied here is correlated to their redox potential. The present findings can be used as a general guide towards design and synthesis of air-stable ambipolar/ n -channel molecules.Keywords
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