Demonstration of 140 A, 800 V 4H-SiC pin/Schottky barrier diodes with multi-step junction termination extension structures

Abstract

DC test results of MPS diodes using multi-step junction termination extension (MJTE) designs are presented. The measurements include reverse leakage current, breakdown, and forward voltage drop. The MJTE design allows full utilisation of the large breakdown properties of SiC. Packaged diodes, containing multiple MPS cells with MJTE designs, also are described.