Response of a SiC photodiode to extreme ultraviolet through visible radiation

Abstract

The responsivity of a type 6H–SiC photodiode in the $1.5–400\mathrm{nm}$ wavelength range was measured using synchrotron radiation. The responsivity was $0.20\mathrm{A}∕\mathrm{W}$ at $270\mathrm{nm}$ and was less than $0.10\mathrm{A}∕\mathrm{W}$ in the extreme ultraviolet (EUV) region. The responsivity was calculated using a proven optical model that accounted for the reflection and absorption of the incident radiation and the variation of the charge collection efficiency (CCE) with depth into the device. The CCE was determined from the responsivity measured in the $200–400\mathrm{nm}$ wavelength range. By use of this CCE and the effective pair creation energy $\left(7.2\mathrm{eV}\right)$ determined from x-ray absorption measurements, the EUV responsivity was accurately modeled with no free parameters. The measured visible-light sensitivity, although low compared with that of a silicon photodiode, was surprisingly high for this wide bandgap semiconductor.