Binding energies of hydrogenic impurities in lateral surface superlattice quantum well wires

Abstract

A variational calculation of hydrogenic impurity binding energies in quasi-one-dimensional GaAs/AlAs quantum well wires with periodic lateral surface structures was carried out. By a coordinate transformation, the structured interfaces of the wires are transformed into planar interfaces so that the boundary conditions of the electronic wavefunctions can be satisfied exactly at the interfaces. The dependences of the binding energies on the positions of the impurities and on the lateral surface structure are studied.