Correlation between target-substrate distance and oxygen pressure in pulsed laser deposition of YBa2Cu3O7
- 2 November 1992
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 61 (18), 2234-2236
- https://doi.org/10.1063/1.108278
Abstract
It is shown that in pulsed laser deposition, there exists an optimal target‐substrate distance for each deposition O2 pressure necessary for the growth of high quality superconducting films. This result indicates that plasma dynamics plays an important role in forming the superconducting films. A scaling law of PD2=constant is obtained for the optimized conditions.Keywords
This publication has 17 references indexed in Scilit:
- Anion-assisted pulsed laser deposition of lead zirconate titanate filmsApplied Physics Letters, 1992
- Dynamics of in situ YBa2Cu3O7 superconducting film formationPhysica C: Superconductivity and its Applications, 1991
- Interface between Y-Ba-Cu-O thin film and cubic zirconia substrateApplied Physics Letters, 1991
- Epitaxial MgO on Si(001) for Y-Ba-Cu-O thin-film growth by pulsed laser depositionApplied Physics Letters, 1991
- High critical current densities in YBa2Cu3O7−x films on polycrystalline zirconiaApplied Physics Letters, 1990
- Structural perfection of Y-Ba-Cu-O thin films controlled by the growth mechanismApplied Physics Letters, 1990
- Correlation between the in situ growth conditions of YBCO thin films and the thermodynamic stability criteriaPhysica C: Superconductivity and its Applications, 1989
- I n s i t u processing of epitaxial Y-Ba-Cu-O high T c superconducting films on (100) SrTiO3 and (100) YS-ZrO2 substrates at 500–650 °CApplied Physics Letters, 1989
- Role of the oxygen atomic beam in low-temperature growth of superconducting films by laser depositionApplied Physics Letters, 1989
- Epitaxial growth of YBa2Cu3O7−x thin films by a laser evaporation processApplied Physics Letters, 1988