Generation and Termination of Stacking Faults by Inverted Domain Boundaries in 3C-SiC
- 6 May 2020
- journal article
- research article
- Published by American Chemical Society (ACS) in Crystal Growth & Design
- Vol. 20 (5), 3104-3111
- https://doi.org/10.1021/acs.cgd.9b01708
Abstract
No abstract availableFunding Information
- H2020 Industrial Leadership (720827)
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