High-mobility thin-film transistors based on aligned carbon nanotubes
- 30 June 2003
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 83 (1), 150-152
- https://doi.org/10.1063/1.1589181
Abstract
Thin-film transistors based on aligned carbon nanotubes (CNTs) were fabricated by directly growing highly ordered CNTs on silicon dioxide surface. The transistor shows a pronounced field effect. Electric transport through the aligned carbon nanotubes is dominated by the holes at room temperature. A hole mobility of the CNT thin-film transistor was estimated to be as high as Such a mobility is comparable to that of heavily doped n-Si and is larger than individual CNT field-effect transistor. Thus, it reveals a potential application of the aligned CNTs in electronics.
Keywords
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