Memory characteristics of silicon nitride with silicon nanocrystals as a charge trapping layer of nonvolatile memory devices
- 13 June 2005
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 86 (25)
- https://doi.org/10.1063/1.1951060
Abstract
No abstract availableThis publication has 11 references indexed in Scilit:
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