Efficient stress-relaxation in InGaN/GaN light-emitting diodes using carbon nanotubes
- 26 August 2015
- journal article
- research article
- Published by Royal Society of Chemistry (RSC) in Nanoscale
- Vol. 7 (37), 15099-15105
- https://doi.org/10.1039/c5nr04239a
Abstract
A facile method to facilitate epitaxial lateral overgrowth (ELO) of gallium nitride (GaN) was developed by using single-walled carbon nanotubes (SWCNTs). High-quality GaN was achieved on sapphire by simply coating the SWCNTs as an intermediate layer for stress and defect mitigation. SWCNTs maintained their integrity at high reaction temperature and led to suppression of edge dislocations and biaxial stress relaxation by up to 0.32 GPa in a GaN template layer. InGaN/GaN multi-quantum-well light-emitting diodes (LEDs) on this high-quality GaN template offered enhanced internal quantum efficiency and light output power with reduced efficiency droop. The method developed here has high potential to replace current ELO methods such as patterned sapphire substrates or buffer layers like SiO2 and SiNx.This publication has 45 references indexed in Scilit:
- Growth of GaN Layers on Sapphire by Low‐Temperature‐Deposited Buffer Layers and Realization of p‐type GaN by Magesium Doping and Electron Beam Irradiation (Nobel Lecture)Angewandte Chemie, 2015
- Blue Light: A Fascinating Journey (Nobel Lecture)Angewandte Chemie, 2015
- History of Gallium–Nitride-Based Light-Emitting Diodes for IlluminationProceedings of the IEEE, 2013
- Efficiency droop in InGaN/GaN blue light-emitting diodes: Physical mechanisms and remediesJournal of Applied Physics, 2013
- Interplay of polarization fields and Auger recombination in the efficiency droop of nitride light-emitting diodesApplied Physics Letters, 2012
- Dependence of radiative efficiency and deep level defect incorporation on threading dislocation density for InGaN/GaN light emitting diodesApplied Physics Letters, 2012
- Stress-relaxed growth of n-GaN epilayersApplied Physics Letters, 2012
- Dislocation Filtering in GaN NanostructuresNano Letters, 2010
- Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodesApplied Physics Letters, 2007
- Metal organic vapour phase epitaxy of GaN and lateral overgrowthReports on Progress in Physics, 2004