Molecular Beam Epitaxy of GaSb on GaAs Substrates with AlSb Buffer Layers
- 1 January 2009
- journal article
- Published by IOP Publishing in Chinese Physics Letters
Abstract
No abstract availableKeywords
This publication has 23 references indexed in Scilit:
- Effects of buffer layer on the structural and electrical properties of InAsSb epilayers grown on GaAs (001)physica status solidi (c), 2006
- Type-II InAs/GaInSb superlattices for infrared detection: an overviewPublished by SPIE-Intl Soc Optical Eng ,2005
- Interband cascade lasers grown on GaAs substrates lasing at 4 micronsApplied Physics Letters, 2004
- InAs quantum-dot GaAs-based lasers grown on AlGaAsSb metamorphic buffersJournal of Applied Physics, 2003
- Very-long wave ternary antimonide superlattice photodiode with 21 μm cutoffApplied Physics Letters, 2003
- Very long wavelength infrared type-II detectors operating at 80 KApplied Physics Letters, 2000
- Growth and characterization of very long wavelength type-II infrared detectorsPublished by SPIE-Intl Soc Optical Eng ,2000
- Variation of surface morphology with substrate temperature for molecular beam epitaxially grown GaSb(100) on GaAs(100)Applied Physics Letters, 1996
- Spiral growth of GaSb on (001) GaAs using molecular beam epitaxyApplied Physics Letters, 1995
- Strain relaxation of compositionally graded InxGa1−xAs buffer layers for modulation-doped In0.3Ga0.7As/In0.29Al0.71As heterostructuresApplied Physics Letters, 1992