MoS 2 transistors with 1-nanometer gate lengths
Top Cited Papers
- 7 October 2016
- journal article
- other
- Published by American Association for the Advancement of Science (AAAS) in Science
- Vol. 354 (6308), 99-102
- https://doi.org/10.1126/science.aah4698
Abstract
A flatter route to shorter channels: High-performance silicon transistors can have gate lengths as short as 5 nm before source-drain tunneling and loss of electrostatic control lead to unacceptable leakage current when the device is off. Desai et al. explored the use of MoS 2 as a channel material, given that its electronic properties as thin layers should limit such leakage. A transistor with a 1-nm physical gate was constructed with a MoS 2 bilayer channel and a single-walled carbon nanotube gate electrode. Excellent switching characteristics and an on-off state current ratio of ∼10 6 were observed. Science , this issue p. 99Keywords
Funding Information
- U.S. Department of Energy (DE-AC02-05CH11231)
- Applied Materials, Inc.
- Entegris, Inc.
- I-RiCE program
- Office of Naval Research BRC
- NRI SWAN Center and Chinese Academy of Sciences President's International Fellowship Initiative (2015VTA031)
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