Endotaxial Silicide Nanowires
- 15 December 2004
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 93 (25), 256102
- https://doi.org/10.1103/physrevlett.93.256102
Abstract
We demonstrate the growth of self-assembled nanowires of cobalt silicide on Si(111), (100), and (110) substrates during deposition of Co onto a heated Si substrate. Silicide islands form via an endotaxial mechanism, growing into the substrate along inclined planes, which breaks the symmetry of the surface and leads to a long, thin nanowire shape. During growth, both the length and width of the islands increase with time in a fixed proportion that varies strongly with growth temperature, which shows that the nanowire shape is kinetically determined. It is expected that nanowires could form in many other overlayer/substrate systems via this mechanism.
Keywords
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