Properties of InGaN quantum-well heterostructures grown on sapphire by metalorganic chemical vapor deposition
- 15 September 1997
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 71 (11), 1537-1539
- https://doi.org/10.1063/1.119959
Abstract
We report the growth and characterization of InGaN heteroepitaxial thin films and quantum-well heterostructures on (0001) sapphire substrates. The III-N heteroepitaxial layers are grown by metalorganic chemical vapor deposition on sapphire substrates using various growth conditions. A comparison of the 300 K photoluminescence (PL) spectra of the samples indicates that a higher PL intensity is measured for the quantum-well structures having an intentional -type Si-doping concentration. Furthermore, three-, five-, and eight-period InGaN quantum-well structures exhibit similar narrow PL spectra.
Keywords
This publication has 11 references indexed in Scilit:
- Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes with a lifetime of 27 hoursApplied Physics Letters, 1997
- High-resolution x-ray analysis of InGaN/GaN superlattices grown on sapphire substrates with GaN layersApplied Physics Letters, 1996
- Effect of shroud flow on high quality InxGa1−xN deposition in a production scale multi-wafer-rotating-disc reactorJournal of Electronic Materials, 1996
- InGaN-Based Multi-Quantum-Well-Structure Laser DiodesJapanese Journal of Applied Physics, 1996
- High-Brightness InGaN Blue, Green and Yellow Light-Emitting Diodes with Quantum Well StructuresJapanese Journal of Applied Physics, 1995
- Widegap Column‐ III Nitride Semiconductors for UV/Blue Light Emitting DevicesJournal of the Electrochemical Society, 1994
- Si-Doped InGaN Films Grown on GaN FilmsJapanese Journal of Applied Physics, 1993
- Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxyApplied Physics Letters, 1991
- Preparation and optical properties of Ga1−xInxN thin filmsJournal of Applied Physics, 1975
- Fundamental absorption edge in GaN, InN and their alloysSolid State Communications, 1972