Soft error rate and stored charge requirements in advanced high-density SRAMs

Abstract

This work presents a quantitative model which attributes most soft errors in dense SRAMs not to alpha particles as is commonly accepted, but to cosmic ray events. This work also elucidates for the first time the stored charge required in SRAM cells to achieve acceptable soft error rates. Enhancements to add capacitance are necessary at the 4 Megabit level and beyond. One method of enhancing the cell capacitance is reported in detail.<>