Wafer-Scale Synthesis and Transfer of Graphene Films
- 4 January 2010
- journal article
- letter
- Published by American Chemical Society (ACS) in Nano Letters
- Vol. 10 (2), 490-493
- https://doi.org/10.1021/nl903272n
Abstract
We developed means to produce wafer scale, high-quality graphene films as large as 3 in. wafer size on Ni and Cu films under ambient pressure and transfer them onto arbitrary substrates through instantaneous etching of metal layers. We also demonstrated the applications of the large-area graphene films for the batch fabrication of field-effect transistor (FET) arrays and stretchable strain gauges showing extraordinary performances. Transistors showed the hole and electron mobilities of the device of 1100 ± 70 and 550 ± 50 cm2/(V s) at drain bias of −0.75 V, respectively. The piezo-resistance gauge factor of strain sensor was ∼6.1. These methods represent a significant step toward the realization of graphene devices in wafer scale as well as application in optoelectronics, flexible and stretchable electronics.This publication has 22 references indexed in Scilit:
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