Metal-oxide-semiconductor based gas sensors: screening, preparation, and integration
Top Cited Papers
- 24 January 2017
- journal article
- perspective
- Published by Royal Society of Chemistry (RSC) in Physical Chemistry Chemical Physics
- Vol. 19 (9), 6313-6329
- https://doi.org/10.1039/c6cp07799d
Abstract
A review of the recent progress in the applications of MOS-based gas sensors is presented, covering the whole fabrication process of screening, preparation and integration.Keywords
This publication has 100 references indexed in Scilit:
- Proposal of contact potential promoted oxide semiconductor gas sensorSensors and Actuators B: Chemical, 2013
- Properties of NiO sputtered thin films and modeling of their sensing mechanism under formaldehyde atmospheresActa Materialia, 2013
- Enhanced CO gas sensing properties of Pt-functionalized WO3 nanorodsThermochimica Acta, 2012
- Highly sensitive ammonia resistive sensor based on electrospun V2O5 fibersSensors and Actuators B: Chemical, 2012
- High toluene sensing properties of NiO–SnO2 composite nanofiber sensors operating at 330°CSensors and Actuators B: Chemical, 2011
- Basic approach to the transducer function of oxide semiconductor gas sensorsSensors and Actuators B: Chemical, 2011
- A review of high throughput and combinatorial electrochemistryElectrochimica Acta, 2011
- Combinatorial and High-Throughput Screening of Materials Libraries: Review of State of the ArtACS Combinatorial Science, 2011
- Epitactically Interpenetrated High Quality ZnO Nanostructured Junctions on Microchips Grown by the Vapor−Liquid−Solid MethodCrystal Growth & Design, 2010
- CO sensing with SnO2 thick film sensors: role of oxygen and water vapourThin Solid Films, 2003