Reliability aspects of SiC Schottky diodes
- 1 October 2009
- journal article
- research article
- Published by Wiley in Physica Status Solidi (a)
- Vol. 206 (10), 2295-2307
- https://doi.org/10.1002/pssa.200925083
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- A Case for High Temperature, High Voltage SiC Bipolar DevicesMaterials Science Forum, 2007
- Reliability of SiC Power Devices Against Cosmic Radiation-Induced FailureMaterials Science Forum, 2007
- Low Resistance Cathode Metallization and Die-Bonding in Silicon Carbide P-N Junction DiodesMaterials Science Forum, 2007
- A Surge Current Stable and Avalanche Rugged SiC Merged pn Schottky Diode Blocking 600V Especially Suited for PFC ApplicationsMaterials Science Forum, 2006
- Die Bonding Issues on Silicon Carbide DiodesMaterials Science Forum, 2006
- Influence of Overgrown Micropipes in the Active Area of SiC Schottky Diodes on Long Term ReliabilityMaterials Science Forum, 2005
- Degradation in SiC Bipolar Devices: Sources and Consequences of Electrically Active Dislocations in SiCMaterials Science Forum, 2003
- Micropipe Closing via Thick 4H-SiC Epitaxial Growth Involving Structural Transformation of Screw DislocationsMaterials Science Forum, 2001
- Long term operation of 4.5kV PiN and 2.5kV JBS diodesMaterials Science Forum, 2000
- Micropipe and dislocation density reduction in 6H-SiC and 4H-SiC structures grown by liquid phase epitaxyJournal of Electronic Materials, 1998