Charge pumping in MOS devices
- 1 March 1969
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 16 (3), 297-302
- https://doi.org/10.1109/t-ed.1969.16744
Abstract
Gate pulses applied to MOS transistors were found to stimulate a net flow of charge into the substrate. Investigation of this effect revealed a charge-pumping phenomeonon in MOS gate-controlled-diode structures. A first-order theory is given, whereby the injected charge is separated into two components. One component involves coupling via fast surface states at the Si-SiO2interface under the gate, while the other involves recombination of free inversion-layer charge into the substrate.Keywords
This publication has 8 references indexed in Scilit:
- Minority carrier lifetime determination from inversion layer transient responseIEEE Transactions on Electron Devices, 1967
- Operation of p-n Junction Photodetectors in a Photon Flux Integrating ModeIEEE Journal of Solid-State Circuits, 1967
- The Si-SiO2Interface - Electrical Properties as Determined by the Metal-Insulator-Silicon Conductance TechniqueBell System Technical Journal, 1967
- Characteristics of the Surface-State Charge (Qss) of Thermally Oxidized SiliconJournal of the Electrochemical Society, 1967
- Surface state and surface recombination velocity characteristics of Si-SiO2interfacesIEEE Transactions on Electron Devices, 1966
- Physical limitations on the frequency response of a semiconductor surface inversion layerSolid-State Electronics, 1965
- Investigation of thermally oxidised silicon surfaces using metal-oxide-semiconductor structuresSolid-State Electronics, 1965
- Impedance of semiconductor-insulator-metal capacitorsSolid-State Electronics, 1964