Silicon nanowires: catalytic growth and electrical characterization
- 23 October 2006
- journal article
- Published by Wiley in Physica Status Solidi (b)
- Vol. 243 (13), 3340-3345
- https://doi.org/10.1002/pssb.200669138
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Silicon Vertically Integrated Nanowire Field Effect TransistorsNano Letters, 2006
- Diameter-Dependent Growth Direction of Epitaxial Silicon NanowiresNano Letters, 2005
- Controlled Growth of Si Nanowire Arrays for Device IntegrationNano Letters, 2005
- Sub-20 nm Short Channel Carbon Nanotube TransistorsNano Letters, 2004
- Contact improvement of carbon nanotubes via electroless nickel depositionApplied Physics A, 2003
- In-Situ Contacted Single-Walled Carbon Nanotubes and Contact Improvement by Electroless DepositionNano Letters, 2003
- Diameter-controlled synthesis of single-crystal silicon nanowiresApplied Physics Letters, 2001
- Room-temperature transistor based on a single carbon nanotubeNature, 1998
- Barrier heights and silicide formation for Ni, Pd, and Pt on siliconPhysical Review B, 1981
- VAPOR-LIQUID-SOLID MECHANISM OF SINGLE CRYSTAL GROWTHApplied Physics Letters, 1964