RBS/Simulated annealing analysis of buried SiCOx layers formed by implantation of O into cubic silicon carbide
- 1 March 1998
- journal article
- Published by Elsevier BV in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 136-138, 1168-1171
- https://doi.org/10.1016/s0168-583x(97)00686-1
Abstract
No abstract availableKeywords
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