Highly Reliable Thin Silicon Dioxide Layers Grown on Heavily Phosphorus Doped Poly‐Si by Rapid Thermal Oxidation
- 1 July 1990
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 137 (7), 2261-2265
- https://doi.org/10.1149/1.2086924