Demonstration of a quantum cellular automata cell in a GaAs∕AlGaAs heterostructure

Abstract
The authors report on the experimental demonstration of a GaAs∕AlGaAs-based quantum cellular automata cell fabricated using electron beam lithographically defined gates. These surface metallic gates form a pair of double quantum dots, as well as a pair of quantum point contacts (QPCs) that act as noninvasive voltage probes. Measurements at cryogenic temperatures show that an electron transfer in the input dots induces the relocation of a single electron in the output dots. Using the QPCs they were also able to determine the operating limits of the cell.