Intentionally Carbon-Doped AlGaN/GaN HEMTs: Necessity for Vertical Leakage Paths
- 17 January 2014
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 35 (3), 327-329
- https://doi.org/10.1109/led.2013.2297626
Abstract
Dynamic on-resistance (RON) in heavily carbon-doped AlGaN/GaN high electron mobility transistors is shown to be associated with the semi-insulating carbon-doped buffer region. Using transient substrate bias, differences in RON dispersion between transistors fabricated on nominally identical epilayer structures were found to be due to the band-to-band leakage resistance between the buffer and the 2-DEG. Contrary to normal expectations, suppression of dynamic RON dispersion in these devices requires a high density of active defects to increase reverse leakage current through the depletion region allowing the floating weakly p-type buffer to remain in equilibrium with the 2-DEG.Keywords
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