Lattice resolved annular dark-field scanning transmission electron microscopy of (Al, In)GaN/GaN layers for measuring segregation with sub-monolayer precision
- 5 September 2012
- journal article
- energy materials-and-thermoelectrics
- Published by Springer Science and Business Media LLC in Journal of Materials Science
- Vol. 48 (7), 2883-2892
- https://doi.org/10.1007/s10853-012-6822-3
Abstract
No abstract availableKeywords
This publication has 33 references indexed in Scilit:
- Characterization of thickness, elemental distribution and band-gap properties in AlGaN/GaN quantum wells by aberration-corrected TEM/STEMJournal of Physics: Conference Series, 2012
- Configuring a 300kV cold field-emission gun for optimum analytical performanceJournal of Physics: Conference Series, 2012
- An improved approach to quantitative X-ray microanalysis in (S)TEM: Thickness dependentk-factorsJournal of Physics: Conference Series, 2010
- Comparison of experimental and theoretical X-ray intensities from (In)GaAs specimens investigated by energy-dispersive X-ray spectroscopy in a transmission electron microscopeJournal of Physics: Conference Series, 2010
- Indium adlayer kinetics on the gallium nitride (0001) surface: Monitoring indium segregation and precursor-mediated adsorptionPhysical Review B, 2008
- Mechanisms of dislocation reduction in an Al0.98Ga0.02N layer grown using a porous AlN bufferApplied Physics Letters, 2006
- Greatly improved performance of 340nm light emitting diodes using a very thin GaN interlayer on a high temperature AlN buffer layerApplied Physics Letters, 2006
- A new experimental procedure to quantify annular dark field images in scanning transmission electron microscopyJournal of Microscopy, 2006
- Polarization charge screening and indium surface segregation in (In,Ga)N/GaN single and multiple quantum wellsPhysical Review B, 2000
- Diffusion and Surface Segregation in Thin SiGe/Si Layers Studied by Scanning Transmission Electron MicroscopyDefect and Diffusion Forum, 1997