New modeling of the power diode using the VHDL-AMS language
- 19 December 2007
- journal article
- Published by EDP Sciences in The European Physical Journal Applied Physics
- Vol. 41 (1), 1-11
- https://doi.org/10.1051/epjap:2007176
Abstract
Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. This paper focuses on an implementation of a physic-based analytical PIN diode model [Power Electron. 8, 342 (1993)] with the very high description language VHDL-AMS [IEEE Computer Society, IEEE Draft Standard VHDL-AMS Language Reference Manual, 1997]. The Lumped Charge (LC) concept of Linvill is employed. The state-of-art of parameter extraction methods is briefly recalled and a step-by-step extraction procedure for the model parameters is described. Due to poor agreement between simulation results and experimental data, an improvement is added to the model. Finally, our improved model is validated with a confrontation of the simulated and the experimental curves for both current and voltage at different range of the operating conditions. All this operation was made under the Free version of the “SIMPLORER©-SV 7.0” environment.Keywords
This publication has 10 references indexed in Scilit:
- On the Extraction of PiN Diode Design Parameters for Validation of Integrated Power Converter DesignIEEE Transactions on Power Electronics, 2005
- Silicon carbide PiN and merged PiN Schottky power diode models implemented in the Saber circuit simulatorIEEE Transactions on Power Electronics, 2004
- On the validity of the standard SPICE model of the diode for simulation in power electronicsIEEE Transactions on Industrial Electronics, 2001
- Physics-based MCT circuit model using the lumped-charge modeling approachIEEE Transactions on Power Electronics, 2001
- Fundamentals of Power ElectronicsPublished by Springer Science and Business Media LLC ,2001
- A moving boundary diffusion model for PIN diodesIEEE Transactions on Magnetics, 2001
- The lumped-charge power MOSFET model, including parameter extractionIEEE Transactions on Power Electronics, 1995
- A simple power diode model with forward and reverse recoveryIEEE Transactions on Power Electronics, 1993
- Diode forward and reverse recovery model for power electronic SPICE simulationsIEEE Transactions on Power Electronics, 1990
- Studies of turn-off effects in power semiconductor devicesSolid-State Electronics, 1985