Optical detection of cross relaxation in SiC
- 1 July 1982
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 26 (1), 26-34
- https://doi.org/10.1103/physrevb.26.26
Abstract
We report optical detection of cross relaxation (ODCR) for defects in SiC. Many new defects in as-grown and irradiated SiC have been detected by monitoring the effect of their Zeeman energy-conserving spin flips on the triplet bound-exciton luminescence at Ti and at radiation-produced defects. Defects identified by this technique include the nitrogen donor and aluminum acceptor. ODCR may provide a useful new spectroscopic tool for defect study in semiconductors.Keywords
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