Global control and fast solid-state donor electron spin quantum computing
- 22 July 2005
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 72 (4), 045350
- https://doi.org/10.1103/physrevb.72.045350
Abstract
We propose a scheme for quantum information processing based on donor electron spins in semiconductors, with an architecture complementary to the original Kane proposal. We show that a naïve implementation of electron spin qubits provides only modest improvement over the Kane scheme, however through the introduction of global gate control we are able to take full advantage of the fast electron evolution timescales. We estimate that the latent clock speed is 100–1000 times that of the nuclear spin quantum computer with the ratio approaching the level.
Keywords
This publication has 29 references indexed in Scilit:
- Gates for the Kane quantum computer in the presence of dephasingPhysical Review A, 2004
- Charge-based quantum computing using single donors in semiconductorsPhysical Review B, 2004
- Electron spin teleportation current through a quantum dot array operating in the stationary regimePhysical Review B, 2004
- Electron spin relaxation times of phosphorus donors in siliconPhysical Review B, 2003
- Fast nonadiabatic two-qubit gates for the Kane quantum computerPhysical Review A, 2003
- Hydrogenic Spin Quantum Computing in Silicon: A Digital ApproachPhysical Review Letters, 2003
- Error rate of the Kane quantum computer controlled-NOT gate in the presence of dephasingPhysical Review A, 2003
- A silicon-based nuclear magnetic resonance (NMR) quantum computer using resonant transfer of a single electron for the inter-qubit interactionNanotechnology, 2001
- Electron-spin-resonance transistors for quantum computing in silicon-germanium heterostructuresPhysical Review A, 2000
- A silicon-based nuclear spin quantum computerNature, 1998