Oxygen distribution in silicon melt under inhomogeneous transverse-magnetic fields
- 1 August 2001
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 230 (1-2), 100-107
- https://doi.org/10.1016/s0022-0248(01)01315-x
Abstract
No abstract availableThis publication has 10 references indexed in Scilit:
- Oxygen distribution at a solid–liquid interface of silicon under transverse magnetic fieldsJournal of Crystal Growth, 2000
- TRANSIENT THREE-DIMENSIONAL FLOW CHARACTERISTICS OF Si MELT IN A CZOCHRALSKI CONFIGURATION UNDER A CUSP-SHAPED MAGNETIC FIELDNumerical Heat Transfer, Part A: Applications, 1999
- CZ Crystal Growth Development in Super Silicon Crystal ProjectSolid State Phenomena, 1997
- Spoke patterns on molten silicon in Czochralski systemJournal of Crystal Growth, 1994
- Change in Velocity in Silicon Melt of the Czochralski (CZ) Process in a Vertical Magnetic FieldJapanese Journal of Applied Physics, 1994
- Centrifugal pumping during Czochralski silicon growth with a strong transverse magnetic fieldJournal of Crystal Growth, 1994
- Melt motion in a Czochralski puller with a weak transverse magnetic fieldJournal of Crystal Growth, 1990
- Melt motion in a Czochralski crystal puller with an axial magnetic field: Uncertainty in the thermal constantsJournal of Crystal Growth, 1988
- Numerical analysis of oxygen transport in magnetic Czochralski growth of siliconJournal of Crystal Growth, 1987
- Oxygen transport in magnetic Czochralski growth of siliconJournal of Crystal Growth, 1987