DC and large-signal time-dependent electron transport in heterostructure devices: an investigation of the heterostructure barrier varactor
- 1 June 1995
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices
- Vol. 42 (6), 1070-1080
- https://doi.org/10.1109/16.387239
Abstract
No abstract availableKeywords
This publication has 38 references indexed in Scilit:
- Heterostructure barrier varactor simulation using an integrated hydrodynamic device/harmonic-balance circuit analysis techniqueIEEE Microwave and Guided Wave Letters, 1994
- Temperature dependence of the dielectric constant of InPJournal of Applied Physics, 1986
- Energy band alignment in GaAs:(Al,Ga)As heterostructures: The dependence on alloy compositionJournal of Applied Physics, 1986
- Direct energy gap of Al1−xInxAs lattice matched to InPApplied Physics Letters, 1984
- Effects of transient carrier transport in millimeter-wave GaAs diodesIEEE Transactions on Electron Devices, 1984
- Temperature and pressure dependences of the dielectric constants of semiconductorsPhysical Review B, 1983
- The elastic constants of GaAs from 2 K to 320 KJournal of Physics C: Solid State Physics, 1973
- Band Structure and High-Field Transport Properties of InPPhysical Review B, 1970
- Effect of Pressure on Interband Reflectivity Spectra of Germanium and Related SemiconductorsPhysical Review B, 1967
- Low-Temperature Elastic Constants of Indium ArsenideJournal of Applied Physics, 1964