Ammonothermal GaN: Morphology and properties
- 1 April 2010
- journal article
- Published by Elsevier BV in Journal of Crystal Growth
- Vol. 312 (8), 1069-1073
- https://doi.org/10.1016/j.jcrysgro.2009.12.007
Abstract
No abstract availableKeywords
This publication has 17 references indexed in Scilit:
- Ammonothermal growth of bulk GaNJournal of Crystal Growth, 2008
- Excellent crystallinity of truly bulk ammonothermal GaNJournal of Crystal Growth, 2008
- Low-pressure solution growth (LPSG) of GaN templates with diameters up to 3 inchJournal of Crystal Growth, 2007
- Bulk GaN single crystal growth and characterization using various alkali metal fluxJournal of Crystal Growth, 2006
- Ammonothermal Synthesis of III-Nitride CrystalsCrystal Growth & Design, 2006
- Ammonothermal growth of GaN crystals in alkaline solutionsJournal of Crystal Growth, 2006
- Bulk GaN single-crystals growthJournal of Crystal Growth, 2000
- Current status of GaN crystal growth by sublimation sandwich techniqueMRS Internet Journal of Nitride Semiconductor Research, 1998
- Growth of gallium nitride by hydride vapor-phase epitaxyJournal of Crystal Growth, 1997
- High pressure growth of GaN — new prospects for blue lasersJournal of Crystal Growth, 1996