Temperature and pressure dependence of the optical absorption in hexagonal MnTe
- 15 May 2000
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 61 (20), 13679-13686
- https://doi.org/10.1103/physrevb.61.13679
Abstract
The absorption edge of hexagonal (NiAs structure) antiferromagnetic MnTe has been measured by means of light transmission experiments carried out at different temperatures in the range 16–420 K and hydrostatic pressures up to 9 GPa An indirect band gap has been found, in agreement with previous band-structure calculations, with an energy of at room temperature and pressure. The temperature dependence of the absorption edge is linear above the Néel temperature with a temperature coefficient Below an additional blueshift is found, with a maximum value of 0.1 eV at low temperatures. The temperature dependence of this anomalous shift is proportional to the square of the magnetization, a result which is consistent with previous second-order perturbation calculations. Regarding the measurements under pressure, a negative pressure coefficient with a value of has been found. The Néel temperature is known to increase with pressure in hexagonal MnTe, due to an increment of the exchange interaction, or equivalently, of the sublattice magnetization. Consequently a positive pressure shift could be expected at room temperature, derived from both the antiferromagnetic splitting of Mn orbital and second-order electron and hole interaction with fixed Mn spins. The negative pressure coefficient has thus been interpreted as a sum of that positive contribution and a larger negative one derived from an enhanced p-d repulsion which would lead to an upwards shift of the valence-band maximum.
Keywords
This publication has 22 references indexed in Scilit:
- Zinc-blende MnTe: Epilayers and quantum well structuresApplied Physics Letters, 1989
- Total-energy and band-structure calculations for the semimagnetic Te semiconductor alloy and its binary constituentsPhysical Review B, 1987
- Electronic structure of antiferromagnetic MnTeJournal of Physics C: Solid State Physics, 1983
- Energy Band Structure and Electronic Properties of NiAs Type Compounds. II. Antiferromagnetic Manganese TelluridePhysica Status Solidi (b), 1981
- Optical properties and electronic structure of crossroads material MnTeSolid State Communications, 1977
- Optical measurements on the antiferromagnetic semiconductor MnTeJournal of Physics and Chemistry of Solids, 1967
- Effect of pressure on the magnetic transition point of manganese telluridePhysics Letters, 1966
- Contribution of magnon-drag to the thermoelectric power of antiferromagnetic Mn TePhysics Letters, 1964
- HIGH TEMPERATURE MAGNETIC SUSCEPTIBILITIES Of MnO, MnSe AND MnTe1The Journal of Physical Chemistry, 1961
- Magnetic and Electrical Properties of Manganese TellurideJournal of the Physics Society Japan, 1956