High deposition rate laser direct writing of Al on Si
- 13 May 1991
- journal article
- research article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 58 (19), 2087-2089
- https://doi.org/10.1063/1.105019
Abstract
We report, for the first time, the direct write laser patterning of highly conductive Al from a liquid precursor, triisobutylaluminum (TIBA). Al wires were written on Si with a scanned Ar+ laser from liquid TIBA at speeds of up to several mm/s. Wires 3 μm wide by 1 μm high with a resistivity of 5.6 μΩ cm were routinely achievable.Keywords
This publication has 16 references indexed in Scilit:
- Aluminum selective area deposition on Si using diethylaluminumchlorideApplied Physics Letters, 1989
- Surface organometallic chemistry in the chemical vapor deposition of aluminum films using triisobutylaluminum: .beta.-hydride and .beta.-alkyl elimination reactions of surface alkyl intermediatesJournal of the American Chemical Society, 1989
- Laser direct writing of aluminum conductorsApplied Physics Letters, 1988
- Laser writing of copper lines from metalorganic filmsApplied Physics Letters, 1987
- Supplemental multilevel interconnects by laser direct writing: Application to GaAs digital integrated circuitsApplied Physics Letters, 1987
- Frequency dependent characteristics in an ion-implanted photo MESFETSolid-State Electronics, 1987
- Patterned aluminum growth via excimer laser activated metalorganic chemical vapor depositionApplied Physics Letters, 1986
- UV laser deposition of metal films by photogenerated free radicalsApplied Physics Letters, 1986
- Laser induced metal deposition from organometallic solutionApplied Physics Letters, 1984
- Laser Fabrication of Integrated CircuitsPublished by Springer Science and Business Media LLC ,1984