Integrated frequency synthesiser in SiGe BiCMOS technology for 60 and 24 GHz wireless applications
- 1 January 2007
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 43 (3), 154-156
- https://doi.org/10.1049/el:20073834
Abstract
A fully integrated silicon-based frequency synthesiser for 60 and 24 GHz applications is presented. The relative frequency tuning range is 5%, and the total power dissipation is 135 mW at 2.3 V supply voltage. Phase noise at 48 GHz is lower than −98 dBc/Hz at 1 MHz offset over the whole tuning range, which is 8 dB lower than in all previous silicon-based solutions.Keywords
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