Pressure Dependence of High-Temperature Creep in Single Crystals of Indium
- 1 August 1967
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 38 (9), 3697-3700
- https://doi.org/10.1063/1.1710197
Abstract
The activation volume for the high-temperature steady-state creep of high-purity single-crystal indium in the pressure range of 0.8–5.5 kbar has been obtained using the change-of-slope method. The activation volume obtained is 12.0±0.9 cm3/mole, which corresponds to 0.76 atomic volume.Keywords
This publication has 2 references indexed in Scilit:
- ACTIVATION VOLUME AND ENERGY FOR SELF-DIFFUSION IN ALUMINUMApplied Physics Letters, 1965
- Activation energies for creep of cadmium, indium, and tinActa Metallurgica, 1955