Abstract
The X-ray photoelectron spectroscopic deconvolution analysis is applied to quantitatively distinguish valence states of Ni and to obtain the δ value in LaNiO3−δ films on Si substrates. The mechanism of the Ni3+/Ni2+ ratio dependent transport is clarified by the combination of transport measurements and first-principle calculations. At lower Ni3+/Ni2+ ratio of 0.39, the LaNiO2.64 film exhibits semi-conductive behavior with carriers mainly being hopping polarons, while higher Ni3+/Ni2+ ratio transfers the LaNiO2.84 film to an electronic conductor. The observed reduction of the electron-phonon interaction, shortened mean free path, and increased electron-electron coupling are suggested to be correlated to high Ni3+/Ni2+ ratio.