Limit of the mobility enhancement of the excimer-laser-crystallized low-temperature poly-Si TFTs
- 22 January 2003
- conference paper
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- p. 301-304
- https://doi.org/10.1109/iedm.1999.824156
Abstract
Effects of various scattering mechanisms are studied on the excimer-laser-crystallized (ELC) poly-Si TFTs fabricated below 450/spl deg/C on glass. Good Si/SiO/sub 2/ interface comparable to thermal oxide is obtained even for the PE-CVD gate oxide and the low temperature process below 450/spl deg/C. Field-effect-mobility is hardly affected by the in-grain defects and surface morphology of the ELC poly-Si film. The increase in the mobility is found to saturate with the grain size around 1000 nm. It is pointless to enlarge the grain size beyond the saturation point of mobility for performance improvement. Field-effect-mobility of 320 cm/sup 2//Vs is obtained for the crystallized-Si film with grain size of 700 nm and surface roughness of 11 nm. This value of mobility is sufficiently large to integrate a system of LCDs in the quarter-micron design-rule era.Keywords
This publication has 3 references indexed in Scilit:
- A systematic study and optimization of parameters affecting grain size and surface roughness in excimer laser annealed polysilicon thin filmsJournal of Applied Physics, 1997
- Enlargement of Poly-Si Film Grain Size by Excimer Laser Annealing and Its Application to High-Performance Poly-Si Thin Film TransistorJapanese Journal of Applied Physics, 1991
- Mobility Anisotropy of Electrons in Inversion Layers on Oxidized Silicon SurfacesPhysical Review B, 1971