The Effect of the Thermal Boundary Resistance on Self-Heating of AlGaN/GaN HFETs
- 1 January 2003
- journal article
- Published by Springer Science and Business Media LLC in MRS Internet Journal of Nitride Semiconductor Research
Abstract
We have calculated the thermal boundary resistance at the GaN/SiC, GaN/sapphire and GaN/AlN interfaces in the diffuse mismatch approximation. The obtained values were then used to examine the effect of the thermal boundary resistance on heat diffusion in AlGaN/GaN heterostructure field-effect transistors. The results show that the thermal boundary resistance at the device layer interfaces can strongly influence the temperature rise in the device channel.Keywords
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