Preparation of high-quality Ge substrate for MBE
- 1 February 1997
- journal article
- Published by Elsevier BV in Applied Surface Science
- Vol. 108 (2), 303-305
- https://doi.org/10.1016/s0169-4332(96)00854-9
Abstract
No abstract availableKeywords
Funding Information
- Japan Society for the Promotion of Science
- Ministry of Education, Culture, Sports, Science and Technology
This publication has 5 references indexed in Scilit:
- An efficient method for cleaning Ge(100) surfaceSurface Science, 1994
- Atomic layer epitaxy of Si on Ge(100) using Si2Cl6 and atomic hydrogenApplied Physics Letters, 1994
- Thermal desorption of ultraviolet–ozone oxidized Ge(001) for substrate cleaningJournal of Vacuum Science & Technology A, 1993
- Epitaxial Si films on Ge(100) grown via H/Cl exchangeApplied Physics Letters, 1993
- Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBEJournal of the Electrochemical Society, 1986