Discharge mechanisms modeling in LPCVD silicon nanocrystals usingC–Vand capacitance transient techniques†
- 30 November 2000
- journal article
- Published by Elsevier BV in Superlattices and Microstructures
- Vol. 28 (5-6), 493-500
- https://doi.org/10.1006/spmi.2000.0953
Abstract
No abstract availableKeywords
This publication has 11 references indexed in Scilit:
- Silicon quantum dot nucleation on Si3N4, SiO2 and SiOxNy substrates for nanoelectronic devicesJournal of Crystal Growth, 2000
- Light emitting diode structure based on Si nanocrystals formed by implantation into thermal oxideJournal of Luminescence, 1998
- Effects of traps on charge storage characteristics in metal-oxide-semiconductor memory structures based on silicon nanocrystalsJournal of Applied Physics, 1998
- Beyond CMOS: quantum devicesMicroelectronic Engineering, 1997
- A silicon nanocrystals based memoryApplied Physics Letters, 1996
- Size dependence of band gaps in silicon nanostructuresApplied Physics Letters, 1995
- Simplified closed-form trap-assisted tunneling model applied to nitrided oxide dielectric capacitorsJournal of Applied Physics, 1992
- Electronic structure and optical properties of silicon crystallites: Application to porous siliconApplied Physics Letters, 1992
- On tunneling in metal-oxide-silicon structuresJournal of Applied Physics, 1982
- Tunneling of electrons from Si into thermally grown SiO2Solid-State Electronics, 1977