Low threshold voltage ZnO thin film transistor with a Zn0.7Mg0.3O gate dielectric for transparent electronics
- 15 June 2007
- journal article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 101 (12)
- https://doi.org/10.1063/1.2748863
Abstract
No abstract availableThis publication has 29 references indexed in Scilit:
- Properties of phosphorus-doped (Zn,Mg)O thin films and device structuresJournal of Electronic Materials, 2005
- Thin-Film Transistor Fabricated in Single-Crystalline Transparent Oxide SemiconductorScience, 2003
- ZnO-based transparent thin-film transistorsApplied Physics Letters, 2003
- Transparent thin film transistors using ZnO as an active channel layer and their electrical propertiesJournal of Applied Physics, 2003
- Ultraviolet photoconductive detector based on epitaxial Mg0.34Zn0.66O thin filmsApplied Physics Letters, 2001
- Current injection emission from a transparent p–n junction composed of p-SrCu2O2/n-ZnOApplied Physics Letters, 2000
- Varistor CeramicsJournal of the American Ceramic Society, 1999
- Invisible circuitsNature, 1997
- Will UV Lasers Beat the Blues?Science, 1997
- Recent developments in semiconducting thin-film gas sensorsSensors and Actuators B: Chemical, 1995