New thin-film power MOSFETs with a buried oxide double step structure
- 1 May 2006
- journal article
- Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters
- Vol. 27 (5), 377-379
- https://doi.org/10.1109/led.2006.872904
Abstract
A new silicon-on-insulator (SOI) power MOSFET structure is proposed, in which buried oxide step structure (BOSS) is replaced by a buried oxide double step (BODS). Numerical simulations are performed to demonstrate that higher breakdown voltages are obtained resulting from a higher electric-field peak introduced near the BODS, and higher impurity concentration is depleted due to thin-film SOI than that in the conventional SOI and BOSS structure.Keywords
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